feb.1999 mitsubishi transistor modules QM75HA-H high power switching use insulated type outline drawing & circuit diagram dimensions in mm application inverters, servo drives, ups, dc motor controllers, nc equipment, welders QM75HA-H ? i c collector current .......................... 75a ? v cex collector-emitter voltage ........... 600v ? h fe dc current gain............................... 75 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 b c e 33 3.5 3.5 24 4.5 22 7 53.5 43.3 8 8 r6 9 14 5.3 36.5 b e c m4 f 5.3 8 9 label
feb.1999 absolute maximum ratings (tj=25 c, unless otherwise noted) electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 75/100 symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m4 mounting screw m5 typical value ratings 600 600 600 7 75 75 350 4.5 750 C40~+150 C40~+125 2500 0.98~1.47 10~15 1.47~1.96 15~20 90 unit v v v v a a w a a c c v nm kgcm nm kgcm g symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =600v, v eb =2v v cb =600v, emitter open v eb =7v i c =75a, i b =1a Ci c =75a (diode forward voltage) i c =75a, v ce =2v/5v v cc =300v, i c =75a, i b1 =Ci b2 =1.5a transistor part diode part conductive grease applied typ. max. 1.0 1.0 200 2.0 2.5 1.85 2.5 12 3.0 0.35 1.3 0.15 mitsubishi transistor modules QM75HA-H high power switching use insulated type
feb.1999 ? 10 ? 10 1 10 0 10 1 10 0 10 7 5 4 3 2 ? 10 7 5 4 3 2 1.0 1.4 1.8 2.2 2.6 3.0 v ce =2.0v t j =25? 200 160 120 80 40 0 012345 20 60 100 140 180 t j =25? i b =2.0a i b =1.5a i b =1.0a i b =0.5a 3 10 7 5 4 3 2 2 10 7 5 4 3 2 0 10 23457 1 10 23457 2 10 2 v ce =5.0v t j =25? t j =125? v ce =2.0v 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 1 10 23457 2 10 23457 3 10 t j =25? t j =125? v be(sat) v ce(sat) i b =1a 7 5 3 2 7 5 3 2 7 5 3 2 0 5 4 4 4 4 3 2 1 t j =25? t j =125? i c =30a i c =75a i c =50a i c =100a 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 10 23457 1 10 23457 2 10 2 i b1 =? b2 =1.5a v cc =300v t j =25? t j =125? t s t on t f performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM75HA-H high power switching use insulated type
feb.1999 0 10 1 10 0 10 ? 10 ? 10 ? 10 3 10 2 10 1 10 0 10 0 10 1 10 2 10 3 10 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 7 0 10 1 10 7 5 4 3 2 0 10 7 5 4 345 2 3457 1 10 2 ? 10 2 2 3 t f t j =25? t j =125? i c =75a i b1 =1.5a v cc =300v t s 160 0 0 200 400 600 800 120 80 40 20 60 100 140 100 300 500 700 t j =125? i b2 =?a ?a 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 4 4 4 t c =25? 100? t w =50? 1ms dc 10ms 500? 7 5 3 2 7 5 3 2 7 5 3 2 0.1 0.2 0.3 0.4 0.5 0 7 5 3 2 4 4 4 4 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 0.4 0.8 1.2 1.6 2.0 t j =25? t j =125? non?epetitive collector dissipation second breakdown area switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM75HA-H high power switching use insulated type z th (jCc) ( c/ w)
feb.1999 0 10 ? 10 ? 10 ? 10 1 10 0 10 0 10 1 10 2 10 ? 10 0 10 1 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 800 100 200 300 500 400 600 700 2 10 7 5 4 3 2 1 10 7 5 4 3 2 0 10 23457 23457 t j =25? t j =125? v cc =300v i b1 =? b2 =1.5a i rr q rr t rr 7 5 7 5 3 2 7 5 3 2 7 5 3 2 0.4 0.8 1.2 1.6 2.0 0 3 2 7 5 3 2 4 4 4 4 4 i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM75HA-H high power switching use insulated type z th (jCc) ( c/ w) t rr ( m s)
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